Samsung Unveils HBM3E Memory and New Innovations at Memory Tech Days 2023
Samsung, the renowned technology giant, made waves during its Memory Tech Days 2023 event with the unveiling of its latest memory technology. Among the highlights was the introduction of the HBM3E memory, an upgrade over the current HBM3 memory that promises to set new benchmarks for memory bandwidth and speed.
Designed specifically for high-end processors and GPUs used in servers and high-end computing, the HBM3E memory boasts impressive features that put it ahead of its competitors. Samsung claims that it outperforms similar chips from Micron and SK Hynix, cementing its position as a leader in the memory industry.
One of the standout features of the HBM3E memory is its remarkable data transfer speeds of 9.8Gbps per pin, with the ability to reach transfer rates of up to 1.2TBps. This ensures lightning-fast performance and a seamless user experience.
To further enhance its performance, Samsung optimized its NCF technology, improving thermal conductivity by removing gaps between chip layers. This innovation guarantees efficient cooling and prevents thermal throttling, allowing users to push their systems to the limit without compromising on performance.
The fabrication process for the HBM3E memory is equally impressive. Samsung utilizes its fourth-generation EUV-based 10nm class (14nm) node to manufacture the 24GBit HBM memory die. This advanced manufacturing process ensures exceptional quality and reliability.
Flexibility is another key aspect of Samsung’s memory offerings. With its 8Hi and 12Hi stacks, the company can produce HBM3E memory in capacities of 24GB and 36GB. This versatility allows customers to choose the option that best suits their specific needs.
While the HBM3E memory is currently in the sampling phase, Samsung plans to commence mass production in 2024, ensuring wider availability for customers seeking cutting-edge memory solutions.
In addition to the HBM3E memory, Samsung also shared its plans for the development of HBM4 memory. With a focus on more advanced chip manufacturing and packaging technologies, Samsung intends to use FinFET transistors instead of planar transistors, resulting in reduced power consumption.
But memory technology was not the only highlight of Samsung’s event. The company also announced its GDDR7 memory, which offers 50% lower standby power consumption and faster transfer speeds. With impressive 16Gbit (2GB) modules capable of running at up to 32Gbps/pin, Samsung aims to start shipping GDDR7 memory chips in 2024.
Samsung also showcased its commitment to innovation in other areas. The introduction of the LPCAMM memory chips, a detachable form factor for LPDDR5X DRAM, allows for more compact devices that can be easily upgraded. This groundbreaking technology provides users with the flexibility to adapt their devices to evolving needs.
Furthermore, Samsung displayed its leadership in the automotive sector with the unveiling of the Detachable AutoSSD. Boasting data transfer speeds of up to 6,500MBps and a storage capacity of up to 4TB, this SSD enables car makers to make configuration changes to their vehicles effortlessly.
Samsung’s Memory Tech Days 2023 event also introduced automotive-grade high-bandwidth GDDR7 VRAM and LPDDR5X DRAM memory chips. These innovations ensure optimal performance in next-generation vehicles.
Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, emphasized the company’s commitment to driving innovation and collaborating with customers and partners to deliver solutions that expand possibilities. With its latest memory technology and groundbreaking innovations, Samsung solidifies its position as a trailblazer in the industry.